The InGaAs/Si avalanche photodiode (APD) fabricated by the two-step wafer bonding method is achieved, demonstrating a high gain of 235, a responsivity of 2.31 A/W, and an exceptionally low temperature ...

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China School of Physical Sciences, University of ...

Abstract: The intensive development of Single-photon avalanche photodiode (SPAD) based CMOS image sensors (CIS) continues, with rapid progress [1-6]. Yet, due to unestablished quenching operation [5,6 ...