These include transient voltage suppressors (TVS arrays), avalanche breakdown diodes, steering diode TVS arrays, PPTC devices, and electronics SMD chip fuses. These components deliver circuit ...

Abstract: In this paper, a gain automatic adjustment interface circuit is proposed for the non-uniform breakdown voltage of single-photon avalanche diode (SPAD) arrays caused by process and materials.

Robert Woodward, team leader at Toshiba Europe, added, “The key breakthrough was using semiconductor avalanche photodiodes. This hugely simplifies deployment and enables it to go from the lab to ...

This determines how much energy the MOSFET can withstand under avalanche conditions ... A more useful parameter from the circuit design point of view is the total gate charge.

Here we demonstrate a circuit-level avalanche in vertical GaN diodes on low-cost patterned sapphire substrate (PSS), with the avalanche voltage (1.57 kV) and avalanche current density (>2 kA/cm2) both ...

Transistors are the fundamental building blocks behind today's electronic revolution, powering everything from smartphones to ...

By employing the proprietary dToF ranging module equipped with a Single Photon Avalanche Diode (SPAD)*3 sensor, and by utilizing multiple ranging points for distance measurement, it can accurately ...

The teams at the University of Rochester and RIT combined their expertise in optics, quantum information, and photonics to develop technology with photonic-integrated circuits that could ...

EPC aims to displace silicon mosfets from secondary-side synchronous rectifiers with its latest 40V GaN power transistor, designed specifically for 48V to 12V LLC dc-dc converters. “With the EPC2366, ...